inchange semiconductor product specification silicon npn power transistors 2SC2899 description ? with to-126 package ? high voltage,high speed applications ? for high speed and high voltage switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 0.5 a i cm collector current-peak 1.0 a t a =25 ?? 0.75 p c collector power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC2899 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; r be = ?t ,l=100mh 400 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =250ma; i b =50m a 1.0 v v besat base-emitter saturation voltage i c =250ma ;i b =50m a 1.5 v h fe-1 dc current gain i c =250ma ; v ce =5v 15 h fe-2 dc current gain i c =500ma ; v ce =5v 7 i cbo collector cut-off current v cb =400v; i e =0 20 | a i ceo collector cut-off current v ce =350v; r be = ?t 50 | a switching times t on turn-on time 1.0 | s t stg storage time 2.0 | s t f fall time i c =0.5a; i b1 =-i b2 =0.1a v cc ?? 150v 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC2899 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC2899
|
